Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor : InxGa1-xAs/GaAs
Identifieur interne : 000184 ( Russie/Analysis ); précédent : 000183; suivant : 000185Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor : InxGa1-xAs/GaAs
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Abstract
Rich patterns of transformations in the structure of quantum Hall (QH) effect and magnetoresistivity under tilted magnetic fields were obtained in the InxGa1-xAs/GaAs double quantum well at mK temperatures. Local features correspond to the calculated intersections of Landau levels from different subbands and are due to the sharp motion of their crossing points with parallel field component. An incipient quenching with parallel field of the filling factor v = 3 QH state is revealed, which should be due to suppression of the interlayer connection. The observed peculiar monotonous shift in perpendicular fields with increasing in-plain field of the peak between QH states v = 1 and 2 as well as an unusual minimum on some QH plateaus are probably beyond the single particle treatment.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor : In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs</title><author><name sortKey="Yakunin, Michael V" uniqKey="Yakunin M">Michael V. Yakunin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Métal Physics RAS, Semiconductor Laboratory, GSP-170, S. Kovalevskaya Street, 18</s1><s2>Ekaterinburg 620041</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ekaterinburg 620041</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>van der Waals-Zeeman Institute, University of Amsterdam</s1><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>van der Waals-Zeeman Institute, University of Amsterdam</wicri:noRegion></affiliation></author><author><name sortKey="Galistu, Gianni" uniqKey="Galistu G">Gianni Galistu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>van der Waals-Zeeman Institute, University of Amsterdam</s1><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>van der Waals-Zeeman Institute, University of Amsterdam</wicri:noRegion></affiliation></author><author><name sortKey="De Visser, Anne" uniqKey="De Visser A">Anne De Visser</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>van der Waals-Zeeman Institute, University of Amsterdam</s1><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>van der Waals-Zeeman Institute, University of Amsterdam</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0316469</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0316469 INIST</idno><idno type="RBID">Pascal:08-0316469</idno><idno type="wicri:Area/Main/Corpus">006834</idno><idno type="wicri:Area/Main/Repository">005B58</idno><idno type="wicri:Area/Russie/Extraction">000184</idno></publicationStmt><seriesStmt><idno type="ISSN">1386-9477</idno><title level="j" type="abbreviated">Physica ( E) low-dimens. syst. nanostrut.</title><title level="j" type="main">Physica. E, low-dimentional systems and nanostructures</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Fill factor</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Interfacial layer</term><term>Landau levels</term><term>Magnetic field effects</term><term>Magnetoresistance</term><term>Multiple quantum well</term><term>Quantum Hall effect</term><term>Quantum magnetic field</term><term>Quenching</term><term>Subband</term><term>g-factor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Champ magnétique quantifiant</term><term>Magnétorésistance</term><term>Facteur g</term><term>Effet Hall quantique</term><term>Effet champ magnétique</term><term>Niveau Landau</term><term>Sous bande</term><term>Trempe</term><term>Facteur remplissage</term><term>Couche interfaciale</term><term>Puits quantique multiple</term><term>Arséniure d'indium</term><term>Arséniure de gallium</term><term>InxGa1-xAs</term><term>GaAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Rich patterns of transformations in the structure of quantum Hall (QH) effect and magnetoresistivity under tilted magnetic fields were obtained in the In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs double quantum well at mK temperatures. Local features correspond to the calculated intersections of Landau levels from different subbands and are due to the sharp motion of their crossing points with parallel field component. An incipient quenching with parallel field of the filling factor v = 3 QH state is revealed, which should be due to suppression of the interlayer connection. The observed peculiar monotonous shift in perpendicular fields with increasing in-plain field of the peak between QH states v = 1 and 2 as well as an unusual minimum on some QH plateaus are probably beyond the single particle treatment.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1386-9477</s0></fA01><fA03 i2="1"><s0>Physica ( E) low-dimens. syst. nanostrut.</s0></fA03><fA05><s2>40</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor : In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 17th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-17)</s1></fA09><fA11 i1="01" i2="1"><s1>YAKUNIN (Michael V.)</s1></fA11><fA11 i1="02" i2="1"><s1>GALISTU (Gianni)</s1></fA11><fA11 i1="03" i2="1"><s1>DE VISSER (Anne)</s1></fA11><fA12 i1="01" i2="1"><s1>GOLDONI (G.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SORBA (L.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of Métal Physics RAS, Semiconductor Laboratory, GSP-170, S. 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